Overview
SurgeSwitch™ are designed to provide high energy EOS protection with superior clamping and temperature characteristics when compared to standard TVS devices. The device uses a surge rated FET as the main protection element. During an EOS event, transient voltage increases beyond the rated breakdown voltage of the device. The FET in turn switches on and conducts transient current to ground. The TDS clamping voltage is nearly constant across the rated peak pulse current range due to the extremely low ON Resistance of the FET. Lower clamping voltage at maximum peak pulse current makes them more suitable for protecting today's sensitive IC's, when compared to standard TVS diodes.
Features
- High ESD withstand Voltage: ±30kV (Contact) and ±30kV (Air) per IEC 61000-4-2
- High peak pulse current capability: 40A (tp = 8/20μs), 2kV (tp = 1.2/50μs, RS = 42Ω) per IEC 61000-4-5
- High EFT Withstand Voltage: ±4kV (100kHz and 5kHz, 5/50ns) IEC 61000-4-4
- Protects one I/O or power line
- Low ESD and clamping voltage
- Working voltage: 30V
- Solid-state technology
Packaging
- DFN 2.0 x 2.0 x 0.75mm 6-Lead
Order Codes
- TDS3061P.C, 3,000, 7 Inch
PB Free/ROHS
Learn More →
| Documents | Release Date | Type |  |
|---|---|---|---|
| TDS3061P datasheet | 2025-05-16 | | |
Applications
- IoT Devices
- Notebook and Tablet PC
- USB PD
- Appliances
- VBUS Lines
- Solid-State Switches
- USB Type-C
Inventory
| Product | Country | Distributor | Qty | Buy |
|---|
Resources
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