uClamp2512T
uClamp®2512T TVS diode is specifically designed to meet the performance requirements of Gigabit Ethernet interfaces. They are designed to protect sensitive PHY chips from damage or upset due to electrostatic discharge (ESD), lightning, electrical fast transients (EFT), and cable discharge events (CDE). The uClamp2512T is constructed using Semtech’s low voltage EPD process technology. The EPD process provides low operating voltages with significant reductions in leakage current and capacitance over silicon avalanche diode processes.
Features
- High ESD withstand voltage: +/-30kV (Contact/Air) per IEC 61000-4-2
- Able to withstand over 1000 ESD strikes per IEC 61000-4-2 Level 4
- Flow-through design simplifies layout
- Protects two line pairs
- Low reverse current: 10nA typical (VR=2.5V)
- Low variation in capacitance vs. bias voltage: 1.3pF typical (VR = 0 to 2.5V)
- Working voltage: 2.5V
- Solid-state silicon-avalanche technology
- 10/100/1000 ethernet
- Integrated magnetics / RJ-45 connectors
- LAN/WAN equipment
- Security cameras
- Industrial controls
- Notebooks and desktop computers
Applications
Packaging
- 2.0 x 1.0 x 0.4 mm
Order Codes
- uClamp2512T.TCT
Pb(Lead)-Free/RoHS-Green Info
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