Overview

The GN7068 is an extended-capability transimpedance amplifier die and is designed for use with a 10G APD.

The GN7068 design is implemented such that electro-optic gain is well controlled for maximum RF stability in the user's package. The GN7068 is intended to offer careful RF matching of photodiode and TIA for optimized performance.

Features

  • Power dissipation: 94mW (typical)
  • Designed for use with 0.2pF APD
  • Typical transimpedance gain 3.25kΩ
  • Bandwidth (-3dB): 12GHz
  • Operates at OC-192 / STM-64 up to 14.5Gbps NRZ rates
  • On-chip VCC decoupling
  • Operating junction temperature range: -40°C to +125°C

Order Codes

  • Part NumberPackageXN7068Bare Die
  • Shipped in waffle pack

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Applications

  • 10G EPON ONU
  • Serial Data Systems up to 14.5Gbps

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