The GN7068 is an extended-capability transimpedance amplifier die and is designed for use with a 10G APD.
The GN7068 design is implemented such that electro-optic gain is well controlled for maximum RF stability in the user's package. The GN7068 is intended to offer careful RF matching of photodiode and TIA for optimized performance.
- Power dissipation: 94mW (typical)
- Designed for use with 0.2pF APD
- Typical transimpedance gain 3.25kΩ
- Bandwidth (-3dB): 12GHz
- Operates at OC-192 / STM-64 up to 14.5Gbps NRZ rates
- On-chip VCC decoupling
- Operating junction temperature range: -40°C to +125°C
- 10G EPON ONU
- Serial Data Systems up to 14.5Gbps
(-40°C to +85°C / 4000 cycles)
(50°C, 4000 Hrs)
Explore a wealth of downloadable resources and datasheets to assist with prototyping and production.
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