SD12: Single-Line TVS Diode for ESD Protection in Portable Electronics
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- 12 V working voltage
- Protects one I/O or power line
- 350 Watts peak pulse power (tP = 8/20 µs)
- Transient protection for data lines to
- IEC 61000-4-2 (ESD) ± 25 kV (air), ± 10 kV (contact)
- IEC 61000-4-4 (EFT) 40 A (5/50 ns)
- IEC 61000-4-5 (lightning) 24 A (8/20 µs)
- Small package for use in portable electronics
- Suitable replacement for MLVs in ESD protection applications
- Low clamping voltage
- Low leakage current
- Solid-state silicon-avalanche technology
- Cell phone handsets and accessories
- Microprocessor-based equipment
- Personal digital assistants (PDAs)
- Notebooks, desktops, and servers
- Portable intrumentation
- Pagers peripherals
- SD12.TC: Tin-Lead SD12.TC is NCNR, Not Recommended for New Designs- Replacement Device is SD12.TCT (lead-free)
- SD12.TCT: Lead-free, RoHS and WEEE compliant, 3000 pcs. Tape & Reel
Datasheets
Application Matrices
Application Notes
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TVS Diode Selection - SI96-02 (PDF 64KB, 4/08)
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ESD Protection -SI96-12 (PDF 71KB, 5/08)
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Transient Immunity Standards: IEC 61000-4-x - AN96-07 (PDF 48KB, 4/08)
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TVS Power Derating vs. Temperature - SI96-04 (PDF 41KB, 4/06)
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PCB Design Guidelines for ESD Suppression - SI99-01 (PDF 118KB, 4/08)
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Unidirectional and Bidirectional Operation - SI96-05 (PDF 35KB, 4/06)
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TVS Peak Pulse Power vs. Pulse Duration - SI96-03 (PDF 49KB, 4/06)
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ESD Threat to Semiconductor Devices - SI96-11 (PDF 109KB, 4/08)
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Transient Protection of MOSFETS - SI96-13 (PDF 36KB, 4/08)
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Calculating Clamping Voltage at Different Peak Pulse Currents - SI97-03 (PDF 54KB, 4/06)
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What are TVS Diodes? - SI96-01 (PDF 59KB, 5/08)
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Disadvantage of On-Chip Transient Protection - SI97-04 (PDF 107KB, 4/08)
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Calculating Transient Energy - SI97-02 (PDF 61KB, 4/08)
